1、PNP epitaxial silicon transistor. Low frequency power amplifier.
PNP外延硅晶體管。低頻功率放大器。
2、Epitaxial Growth of SOI Structure Formed by N~+ Implantation
氮離子注入形成SOI結(jié)構(gòu)的外延研究
3、THE PHOTOGRAPHIC PROPERTY OF THE EPITAXIAL AgCl/AgBr EMULSION
外延AgCl/AgBr乳劑感光性能的研究
4、Study of 2μm Epitaxial N-Well CMOS Technology
兩微米外延N阱CMOS藝的研究
5、Epitaxial growth of Hg_(0.7)Cd_(0.3)Te by laser-assisted deposition
激光蒸發(fā)淀積的Hg_(0.7)Cd_(0.3)Te外延生長(zhǎng)
6、PHOTOLUMINESCENCE STUDY OF EPITAXIAL CdTe/GaAs GROWN BY MBE
MBECdTe/GaAs光致發(fā)光研究
7、UHV/CVD Si epitaxial growth on porous silicon has been reported.
報(bào)道了采用超高真空化學(xué)氣相淀積 ( UHV/CVD)在多孔硅層上的單晶硅外延技術(shù) .
8、Epitaxial process and factors affecting property of the material were discussed.
討論了外延工藝和影響材料性質(zhì)的因素。
9、Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
外延沉積接著用以形成一外延層于該外延表面上。
10、BST thin films sol gel technique epitaxial growth electrical properties.
標(biāo)簽薄膜溶膠-凝膠工藝外延生長(zhǎng)電性能。
11、Epitaxial growth steps and growth spirals were observed from epitaxial film appearance photograph.
從外延形貌照片中觀察到了外延生長(zhǎng)臺(tái)及生長(zhǎng)螺線。
12、Epitaxial Growth of 150mm Silicon Epi|Wafers for Advanced IC Applications
用于先進(jìn) CMOS電路的 150 mm硅外延片外延生長(zhǎng)(英文)
13、EPITAXIAL LIFT-OFF GaAs/GaAlAs DH LEDs ON Si FOR OEIC
外延遷移技術(shù)制作光電子單片集成Si的GaAs/GaAlAs DH LED
14、MBE Growth of High 2-DEG Sheet Density InP Based PHEMT Epitaxial Materials
MBE生長(zhǎng)高2-DEG面密度InP基PHEMT外延材料
15、Epitaxial Growth of Diamond on Synthetic Diamond Substrate by CVD Method
微波等離子體CVD法在人造金剛石襯底上外延生長(zhǎng)金剛石
16、THE INCREASE OF THE COERCIVITY OF γ-Fe_2O_3 POWDER BY EPITAXIAL Co-DOPING
包鈷型γ—Fe_2O_3磁粉矯頑力增大原因的探討
17、(100)N/N~+ Epitaxial Slice of Silicon for MOS
MOS用(100)N/N~+硅外延片
18、High quality Hg_(1-x)Cd_xTe epitaxial layers by the organometallic process
用有機(jī)金屬法生長(zhǎng)的高質(zhì)量Hg_(1-x)Cd_xTe外延層
19、A two-step epitaxial growth technique from low pressure to atmospheric pressure has been presented.
本文提出了低-常壓兩步外延生長(zhǎng)技術(shù)。
20、10Gb/s EML Module Based on Identical Epitaxial Layer Scheme
基于同一外延層結(jié)構(gòu)的10Gb/s單片集成光發(fā)射模塊(英文)
epitaxial翻譯
【電】 晶膜 詳情

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