1、The photoluminescence mechanism for our samples is also discussed.
對樣品的發(fā)光機理作了初步探討。

2、INFLUENCE OF Cc~(3+) AND Bi~(3+) ON Sra~(3+) PHOTOLUMINESCENCE IN REBO_3
REBO_3中Ce~(3+)和Bi~(3+)對Sm~(3+)光致發(fā)光的影響

3、PHOTOLUMINESCENCE OF Eu~(3+) IN Ca_3La_3(BO_3)_5
Ca_3La_3(BO_3)_5中Eu~(3+)的光致發(fā)光

4、Room temperature photoluminescence spectra of the sample annealed at different temperatures.
圖3樣品在不同退火溫度下的室溫光致發(fā)光譜Fig。

5、The photoluminescence mechanism for our sample is also discussed.
并對樣品的發(fā)光機理作了初步探討。

6、Photoluminescence and DLTS Study on Al_X Ga_(1-x) As:Te
Al_x Ga_(1-x)AS:Te的光致發(fā)光和DLTS研究(英文)

7、PHOTOLUMINESCENCE STUDY OF EPITAXIAL CdTe/GaAs GROWN BY MBE
MBECdTe／GaAs光致發(fā)光研究

8、It shows that the collection is superposition of Raman and photoluminescence spectrum.
結(jié)果表明，所采集到的是拉曼光譜和光致發(fā)光光譜的疊加。

9、PHOTOLUMINESCENCE OF GaAs/AlGaAs MULTIQUANTUM WELLS GROWN BY MOCVD
MOCVD制備GaAs/AlGaAs多量子阱的光致發(fā)光特性

10、Photoluminescence of Nanorods SiC
SiC納米晶須的光致發(fā)光研究

11、PHOTOLUMINESCENCE AND APPLICATION OF CaS∶Cu +, Eu 2+
CaS:Cu~+,Eu~(2+)的光致發(fā)光及其在農(nóng)業(yè)生產(chǎn)中的應(yīng)用

12、A STUDY OF PHOTOLUMINESCENCE OF GaP(N,Te,Zn) UNDER HIGH PRESSURES
GaP(N,Te,Zn)的靜壓光致熒光研究

13、It 'shows that the collection is superposition of Raman and photoluminescence spectrum.
結(jié)果表明，所采集到的是拉曼光譜和光致發(fā)光光譜的疊加。

14、Photoluminescence of Defects in LEC GaAs
LEC GaAs中缺陷的光致發(fā)光研究

15、SYNTHESIS, PHOTOLUMINESCENCE AND TRIBOLUMINESCENCE OF MPy
MPy的合成、發(fā)射光譜及摩擦發(fā)光性質(zhì)

16、The photoluminescence spectra and the decay curves were recorded on RF-5301PC.
采用RF—5301PC熒光分光光度計測定激發(fā)光譜、發(fā)射光譜和磷光衰減曲線；

17、Study of 1. 36 eV Photoluminescence Peak in n-Type GaAs
n型砷化鎵中1.36eV發(fā)光峰的研究

18、The photoluminescence spectrum indicates that the GaN nanowires have good emission property.
光致發(fā)光譜顯示制備的氮化稼納米線有良好的發(fā)光特性。

19、Photoluminescence for Er,O CO implanted in a Si:H and a SiCx:H Films
鉺、氧共注a-Si:H和a-SiCx:H的154μm光致發(fā)光

20、The photoluminescence of porous silicon can be improved by coated with organic film.
多孔硅與有機材料復(fù)合可以改善多孔硅的光致發(fā)光特性。

21、The safety of long afterglow photoluminescence materials is discussed in this paper.
本文對光致發(fā)光材料的安全問題進行了初步探討。

22、Preparation and Enhanced Photoluminescence of CdS/PANI Coaxial Nanocables
硫化鎘-聚苯胺同軸納米電纜的制備及其光致發(fā)光增強效應(yīng)

23、PHOTOLUMINESCENCE OF Eu3+AND Sm3+ IN (LaO)3BO3
（LaO）_3BO_3中Eu~（3＋）和Sm~（3＋）的光致發(fā)光

24、PHOTOLUMINESCENCE STUDY OF ZnO NANOCRYSTALLITES WITH BN CAPSULES
氮化硼包覆納米氧化鋅體系的光致發(fā)光特性研究

25、PHOTOLUMINESCENCE STUDY ON 0.77 eV EMISSION BAND OF SEMI-INSULATING GaAs
半絕緣砷化鎵中0.77eV熒光帶的研究

photoluminescence翻譯